A 60GHz-band 20dBm power amplifier with 20% peak PAE

Author

Zhao, Yi ; Long, John R. ; Spirito, Marco

Author_Institution

ERL/DIMES, Delft Univ. of Technol., Delft, Netherlands

fYear

2011

fDate

5-7 June 2011

Firstpage

1

Lastpage

4

Abstract

A three-stage, 60GHz transformer-coupled differential power amplifier is implemented in 130nm SiGe-BiCMOS. Common-base differential pair stages extend BVCEO, while neutralization increases isolation, promoting stability. Self-shielded transformers, a parasitic-compensated 4:1 output combiner and 2:4 input splitter are designed for low insertion loss and compact dimensions on-chip. Measured small-signal gain is >;20dB with over 10GHz -3dB bandwidth. Reverse isolation is better than 51dB across 50-65GHz. Maximum output power and peak-PAE are 20.5dBm and 20%, respectively, at 61.5GHz. The PA consumes 353mW from a 1.8V supply and 0.25mm² active area.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; differential amplifiers; millimetre wave power amplifiers; BVCEO; BiCMOS; SiGe; common-base differential pair stages; frequency 10 GHz; frequency 50 GHz to 65 GHz; parasitic-compensated output combiner; power 353 mW; self-shielded transformers; size 130 nm; transformer-coupled differential power amplifier; voltage 1.8 V; BiCMOS integrated circuits; Circuit faults; Gain; Metals; Power amplifiers; Power generation; Power measurement; Millimeter-wave; SiGe-BiCMOS; neutralization; power amplifier; power combining; transformer;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE

Conference_Location

Baltimore, MD

ISSN

1529-2517

Print_ISBN

978-1-4244-8293-1

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2011.5940687

Filename

5940687