Title :
High-power, high-brightness GaInSb/AlGaAsSb quantum-well diode-lasers emitting at 1.9 μm
Author :
Pfahler, C. ; Manz, C. ; Kaufel, G. ; Kelemen, M.T. ; Mikulla, M. ; Wagner, J.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiberg, Germany
Abstract :
This study presents results on GaSb-based tapered diode lasers with an emission wavelength of 1.91 μm at 20°C. The active layer of the samples consists of three compressively strained 10 nm wide Ga0.78In0.22Sb-QWs, separated by 20 nm wide lattice matched Al0.29Ga0.71As0.02Sb0.98 barriers. The QW region is surrounded by 400 nm wide Al0.29Ga0.71As0.02Sb0.98 separate confinement layers, followed by 2 μm thick Al0.84Ga0.16As0.06Sb0.94 n-doped and p-doped cladding layers. The lateral design is composed of a ridge-waveguide section followed by a trapezoidal amplifier. The rear facet is HR-coated with a reflectivity of 97% while the output facet was AR-coated with a reflectivity of ∼1%. The devices are finally mounted junction side down on copper heat sinks.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; reflectivity; semiconductor optical amplifiers; waveguide lasers; 1.91 mum; 10 nm; 2 mum; 20 degC; 20 nm; GaInSb-AlGaAsSb; GaInSb/AlGaAsSb lasers; GaSb-based lasers; HR-coated facet; compressively strained quantum wells; confinement layers; copper heat sinks; high-brightness lasers; high-power lasers; lateral laser design; lattice matched barriers; n-doped cladding layer; p-doped cladding layer; quantum-well diode-lasers; reflectivity; ridge-waveguide section; tapered diode lasers; trapezoidal amplifier; Diode lasers; Heat sinks; Laser beams; Laser modes; Power generation; Power lasers; Pump lasers; Quantum wells; Temperature; Vision defects;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363321
