• DocumentCode
    2018977
  • Title

    Analysis of chemically deposited SnS thin film for solar cell application

  • Author

    Basak, Arindam ; Mishra, Saswat Soumya ; Singh, Udai P. ; Mondai, Anup

  • Author_Institution
    Sch. of Electron. Eng., KIIT Univ., Bhubaneswar, India
  • fYear
    2015
  • fDate
    7-8 Feb. 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    SnS is a promising material for solar cell absorber layer application due to its low cost, easy availability and less toxicity than other semiconductor material used for the same purpose. SnS thin films as an absorber layer for photovoltaic application are deposited using chemical bath deposition (CBD) having a thickness of 550 nm from a solution containing SnCl2.2H2O, TEA, TA and NH3OH NH3OH is used to control the pH of the solution which is maintained at 5. The surface morphology of the deposited film has been examined using X-Ray diffraction and scanning electron microscopy. The optical as well as electrical properties of deposited film have been characterized using UV-Vis spectrophotometer and hall effect measurement system respectively. Results show that films deposited in this process have amorphous crystal structure and have good adherence to the substrate. The bandgap obtained is 1.4eV which is very suitable for its use as absorber material for thin film solar cell.
  • Keywords
    X-ray diffraction; chemical vapour deposition; scanning electron microscopy; solar cells; surface morphology; thin films; CBD; SnS; X-ray diffraction; chemical bath deposition; hall effect measurement system; pH control; scanning electron microscopy; solar cell absorber layer application; surface morphology; thin film solar cell; Chemicals; Glass; Optical films; Photonic band gap; Photovoltaic cells; Chemical bath deposition; Hall Measurement; SnS thin film; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer, Communication, Control and Information Technology (C3IT), 2015 Third International Conference on
  • Conference_Location
    Hooghly
  • Print_ISBN
    978-1-4799-4446-0
  • Type

    conf

  • DOI
    10.1109/C3IT.2015.7060192
  • Filename
    7060192