• DocumentCode
    2019079
  • Title

    Investigation of doping profile effect on characteristics of ion-implanted GaAs MESFET

  • Author

    Shestakov, Alexander K. ; Zhuravlev, Konstantin S. ; Arykov, Vadim S. ; Kagadei, Valery A.

  • Author_Institution
    Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
  • fYear
    2010
  • fDate
    June 30 2010-July 4 2010
  • Firstpage
    181
  • Lastpage
    184
  • Abstract
    Ion-implanted GaAs MESFET was modeled and dependence of MESFET characteristics on doping profile parameters was found. Dependence of transistors characteristics on doping profile parameters variation was investigated.
  • Keywords
    Schottky gate field effect transistors; doping profiles; gallium arsenide; ion implantation; GaAs; MESFET characteristics; doping profile effect; doping profile parameters; ion-implanted MESFET; Doping profiles; Logic gates; Three dimensional displays; MESFET; TCAD; modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    978-1-4244-6626-9
  • Type

    conf

  • DOI
    10.1109/EDM.2010.5568833
  • Filename
    5568833
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2019079