DocumentCode
2019720
Title
Mid-IR room temperature operated GaSb-based lasers and laser arrays
Author
Belenky, Garik ; Kim, J.G. ; Shterengas, L. ; Martinelli, R.U.
Author_Institution
State Univ. of New York, Stony Brook, NY, USA
Volume
2
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
553
Abstract
Technology of GaSb-based type-I quantum-well lasers is considered. The role of quantum-well strain in determining device injection efficiency, differential gain and contribution of Auger recombination to threshold current is discussed.
Keywords
electron-hole recombination; infrared sources; quantum well lasers; semiconductor laser arrays; Auger recombination; GaSb; GaSb-based lasers; device injection efficiency; laser arrays; midIR lasers; quantum-well strain; room temperature; type-I quantum-well lasers; Capacitive sensors; Gas lasers; Laser modes; Optical arrays; Pump lasers; Quantum well lasers; Radiative recombination; Semiconductor laser arrays; Semiconductor lasers; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363358
Filename
1363358
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