Power dissipation mode transition induced by a driving frequency increase in capacitively coupled plasma

Author

You, S.J. ; Kim, H.C. ; Chang, H.Y. ; Lee, Jung Keun

Author_Institution

Dept of Phys., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

fYear

2003

fDate

5-5 June 2003

Firstpage

352

Abstract

Summary form only given, as follows. Electrical characteristics of capacitively coupled plasma at low Pressure (20 mTorr) are measured with different driving frequency. From these measurements, we found a significant change of the power characteristics during frequency increase, which is square dependence of power characteristics changes to a linear dependence. The observed result reveals a power dissipation mode transition induced by driving frequency modulation. Both calculated result from a simple sheath model and PIC have a good agreement with the experimental data.

Keywords

frequency modulation; plasma sheaths; plasma simulation; plasma sources; 20 mtorr; PIC; capacitively coupled plasma; driving frequency increase; driving frequency modulation; electrical characteristics; low pressure; power characteristics; power dissipation mode transition; sheath model; Frequency measurement; Physics; Plasma density; Plasma measurements; Plasma properties; Plasma sources; Plasma temperature; Power dissipation; Pressure measurement; Probes;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on

Conference_Location

Jeju, South Korea

ISSN

0730-9244

Print_ISBN

0-7803-7911-X

Type

conf

DOI

10.1109/PLASMA.2003.1228963

Filename

1228963