• DocumentCode
    2020347
  • Title

    A 5 GHz CMOS Tunable Image-Rejection Low-Noise Amplifier

  • Author

    Lee, Ler Chun ; Abu Khari Bin A´ain ; Kordesch, Albert Victor

  • Author_Institution
    Fac. of Electr. Eng., Univ. of Technol. Malaysia, Johor
  • fYear
    2006
  • fDate
    12-14 Sept. 2006
  • Firstpage
    152
  • Lastpage
    156
  • Abstract
    A 5 GHz image-rejection low-noise amplifier (IR-LNA) was designed using Silterra´s CMOS 0.18 mum RF process. The IR-LNA employs a tunable third-order notch filter to reject the image signal. The notch filter was designed using a metal-insulator-metal capacitor (MIM) and a high quality factor (Q) active resonator. The notch frequency of the filter can be tuned using active inductor. The IR-LNA was simulated using HSPICE with BSIM3v3 MOSFET models. Simulation results show that the IR-LNA exhibits S11 of -22.67 dB, S21 of 16.45 dB, S12 of -75.84 dB, 2.66 dB noise figure (NF), and -21.8 dBm input compression point (P1dB) at 5 GHz. The power dissipation of the IR-LNA is 15.46 mW. With an intermediate frequency of 550 MHz, the image-rejection of the notch filter is -16dB. The tuning range of the notch filter is from 3.30 GHz to 4.15 GHz with a maximum -36 dB image rejection
  • Keywords
    CMOS analogue integrated circuits; MIM devices; MOSFET; Q-factor; SPICE; low noise amplifiers; microwave amplifiers; microwave integrated circuits; notch filters; resonators; semiconductor device models; -22.67 dB; -75.84 dB; 0.18 micron; 15.46 mW; 16.45 dB; 2.66 dB; 3.30 to 4.15 GHz; 5 GHz; 550 MHz; BSIM3v3 MOSFET models; CMOS tunable image-rejection low-noise amplifier; HSPICE; Silterra´s CMOS RF process; active inductor; high quality factor active resonator; metal-insulator-metal capacitor; notch frequency; tunable third-order notch filter; Active inductors; CMOS process; Low-noise amplifiers; MIM capacitors; MOSFET circuits; Noise figure; Q factor; Radio frequency; Resonant frequency; Resonator filters; Active inductor; Image-rejection; Low-noise amplifier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    RF and Microwave Conference, 2006. RFM 2006. International
  • Conference_Location
    Putra Jaya
  • Print_ISBN
    0-7803-9745-2
  • Electronic_ISBN
    0-7803-9745-2
  • Type

    conf

  • DOI
    10.1109/RFM.2006.331058
  • Filename
    4133573