DocumentCode
2020474
Title
Dynamic characteristics of quantum dot lasers
Author
Bhattacharya, Pallab
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume
2
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
615
Abstract
This paper describes special techniques, such as modulation doping and tunnel injection, that are required to enhance quantum dot (QD) laser performance. This study also presents the L-I characteristics of a single-mode 1.3 μm p-doped QD laser at various temperatures. Results show that this is the first time that a semiconductor laser has displayed such temperature invariant features.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; optical modulation; quantum dot lasers; semiconductor doping; thermo-optical effects; 1.3 mum; InGaAs-GaAlAs; L-I characteristics; dynamic laser characteristics; laser performance; modulation doping; p-doped QD laser; quantum dot lasers; semiconductor laser; single-mode laser; small-signal modulation; temperature invariant features; tunnel injection; Bandwidth; Electrons; Epitaxial layers; Laser modes; Laser theory; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Temperature; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363389
Filename
1363389
Link To Document