DocumentCode
2022682
Title
A power efficient active K band mixer
Author
Huber, Meik ; Von der Mark, Stefan ; Boeck, Georg
Author_Institution
Microwave Eng. Lab., Technische Univ. Berlin, Germany
fYear
2005
fDate
3-4 Oct. 2005
Firstpage
69
Lastpage
72
Abstract
An energy efficient K band GaAs-HBT mixer applicable in integrated receiver front ends is presented. For pico cell networks, reduction of energy consumption is a central task. This mixer operates with a power as small as 15.6 mW still providing adequate gain making it in some cases unnecessary to use an amplifier. The mixer provides 13.5 dB power gain at 24.5 GHz using 0.5 dBm LO power. Compared to reported K band mixers employing other architectures, this is an excellent performance.
Keywords
III-V semiconductors; MMIC mixers; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; picocellular radio; 13.5 dB; 15.6 mW; 24.5 GHz; GaAs; active K band mixer; integrated receiver front ends; pico cell networks; Batteries; Energy consumption; Epitaxial growth; Epitaxial layers; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit technology; Isolation technology; Radio frequency; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location
Paris
Print_ISBN
88-902012-0-7
Type
conf
Filename
1637152
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