A ultra low-power highly-linear HITD based down-converter for K-band applications

Author

Magrini, I. ; Camprini, M. ; Cidronali, A. ; Collodi, G. ; Manes, G.

Author_Institution

Dept. of Electron. & Telecommun., Florence Univ., Italy

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

73

Lastpage

76

Abstract

In this paper a single balanced mixer, suitable for K band applications, is described. The prototype is realized using an InP process and it is based on heterojunction interband tunnel diodes (HITDs). The circuit, consisting of a pair of HITDs connected to a coplanar Lange coupler, is optimized by a proper diode scaling in the 19-26 GHz band, providing an IF ranging from zero up to 7 GHz. Measurements highlight a conversion loss ranging from 6 dB to 10 dB and an IIP3 of 8 dB in the desired band. Due to the diodes characteristic no DC supply is needed and the functionality is achieved with a LO power of -2 dBm. The results also show a good agreement between the experimental data and simulations.

Keywords

III-V semiconductors; MMIC mixers; indium compounds; microwave diodes; semiconductor device models; 19 to 26 GHz; 6 to 10 dB; InP; K-band applications; coplanar Lange coupler; down-converter; heterojunction interband tunnel diodes; single balanced mixer; ultra low-power highly-linear diode; Coupling circuits; Diodes; Electromagnetic modeling; Equivalent circuits; Heterojunctions; Indium phosphide; Integrated circuit technology; K-band; Linearity; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637153