• DocumentCode
    2022992
  • Title

    Study of highly accelerated thermal cycling test for DC/DC converter

  • Author

    Bin, Yao ; Hui, Chen ; Qingzhong, Xiao ; Xiaowei, Liu

  • Author_Institution
    Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, CEPREI, Guangzhou, China
  • fYear
    2015
  • fDate
    11-14 Aug. 2015
  • Firstpage
    1070
  • Lastpage
    1074
  • Abstract
    DC/DC converter often undergoes the severest thermal stress and most likely to be damaged. The purpose of the paper is to introduce the method of highly accelerated thermal cycling test for DC/DC converter. Firstly, in order to identify the operating limits and failure of DC/DC converters, an on-line monitoring system was established for some key parameters monitoring, such as output voltage, input current and efficiency. Low temperature limits test and high temperature limits test were performed at first. The temperature was decremented and incremented until the device under test failed or the chamber maximum temperature was reached. The low and high temperature operating limits were obtained and failure mechanisms were identified. Based on the results of low and high temperature limits test, the profile of highly accelerated thermal cycling test was designed, and then the test was performed. The failure modes during highly accelerated thermal cycling test was burn-out of MOSFET. We also investigated the failure mechanisms and found the root causes by using some conventional methods of failure analysis such as optical inspection and SEM&EDS analysis. The burn-out of MOSFET is mainly driven by the degradation of heat dissipation performance. The root cause is the degradation of bond performance between the chip and solder, which was due to solder creep and re-melting under the influence of accelerated thermal cycling stress. The solder crack which would affect the reliability was also found. Finally, for reliability improvement, several suggestions were given.
  • Keywords
    Heating; MOSFET; Monitoring; Packaging; Reliability engineering; Switches; DC/DC; crack; creep; re-melting; thermal cycling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology (ICEPT), 2015 16th International Conference on
  • Conference_Location
    Changsha, China
  • Type

    conf

  • DOI
    10.1109/ICEPT.2015.7236765
  • Filename
    7236765