Title :
All-silicon nonlinear transmission line integrated into a Si/SiGe heterostructure bipolar transistor process
Author :
Birk, M. ; Behammer, D. ; Schumacher, H.
Author_Institution :
Dept. of Electron. Devices & Circuits, Ulm Univ., Germany
Abstract :
Summary form only given. Nonlinear Transmission Lines (NLTL) have been fabricated so far on GaAs substrates only. Recently, we were able to demonstrate a working nonlinear transmission line for the first time on high resistivity silicon proving the applicability of the NLTL concept to silicon millimeter wave integrated circuits (SIMMWICs). We have significantly improved our previous results by integrating the NLTL into a Si/SiGe Heterostructure Bipolar Transistor (HBT) process. The falltime of 74 ps of a 4 GHz sine wave was compressed to 12 ps, 4 V amplitude at the output of the NLTL.
Keywords :
Ge-Si alloys; Schottky diodes; bipolar MIMIC; bipolar MMIC; elemental semiconductors; heterojunction bipolar transistors; high-frequency transmission lines; semiconductor materials; silicon; EHF; MIMIC; MM-wave integrated circuits; MMIC; SHF; Si; Si MM-wave ICs; Si NLTL; Si-SiGe; Si/SiGe HBT process; all-silicon nonlinear transmission line; heterostructure bipolar transistor process; high resistivity Si; millimeter wave integrated circuits; Bipolar transistors; Conductivity; Distributed parameter circuits; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave integrated circuits; Millimeter wave transistors; Silicon germanium; Transmission lines;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on
Conference_Location :
Garmisch, Germany
Print_ISBN :
0-7803-6255-1
DOI :
10.1109/SMIC.2000.844302
