Title :
A GaAs-HBT A/D Gray-code converter
Author :
Megherbi, S. ; Pône, J.F. ; Launay, P. ; Dubon, C.
Author_Institution :
Inst. d´´Electron. Fondamentale, Paris Sud Univ., Orsay, France
Abstract :
A monolithic high speed bipolar GaAs-HBT Analog-to-Digital converter is presented. The architecture approach is based upon a parallel conversion method. It relies on a structure mixing conventional flash converter elements without a complex output logic transcoder. We reached a sampling rate larger than 1 G-sample/s, with a 3-bit resolution
Keywords :
Gray codes; III-V semiconductors; analogue-digital conversion; bipolar integrated circuits; code convertors; gallium arsenide; heterojunction bipolar transistors; parallel architectures; signal sampling; 3-bit resolution; GaAs; GaAs-HBT A/D Gray-code converter; flash converter elements; monolithic high speed bipolar GaAs-HBT analog-to-digital converter; parallel conversion method architecture; sampling rate; Current density; Etching; Gallium arsenide; Heterojunction bipolar transistors; Logic; MESFETs; Ohmic contacts; Signal resolution; Signal sampling; Voltage;
Conference_Titel :
Circuits and Systems, 1996., IEEE 39th Midwest symposium on
Conference_Location :
Ames, IA
Print_ISBN :
0-7803-3636-4
DOI :
10.1109/MWSCAS.1996.594094
