A novel method for fabricating CD reference materials with 100 nm linewidths

Author

Allen, Richard A. ; Linholm, L. Orcn W ; Cresswell, M.W. ; Ellenwood, C.H.

Author_Institution

Div. of Semicond. Electron., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

2000

fDate

2000

Firstpage

21

Lastpage

24

Abstract

A technique has been developed to fabricate 100-nm critical dimension (CD) reference features with i-line lithography by utilizing a unique characteristic of single-crystal silicon-on-insulator films: under certain etch conditions, the edges of features align to crystallographic surfaces. In this paper we describe this technique, show results of the process, and present electrical CD measurements that support the use of this technique for producing current and future generations of reference materials for the semiconductor industry.

Keywords

measurement standards; photolithography; silicon-on-insulator; spatial variables measurement; 100 nm; critical dimension; electrical linewidth measurement; etching; i-line lithography; reference material; semiconductor processing; single crystal SOI film; Crystalline materials; Crystallography; Current measurement; Electric variables measurement; Electronics industry; Etching; Lithography; Semiconductor films; Semiconductor materials; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2000. ICMTS 2000. Proceedings of the 2000 International Conference on

Print_ISBN

0-7803-6275-7

Type

conf

DOI

10.1109/ICMTS.2000.844396

Filename

844396