Title :
Extraction of the channel thermal noise in MOSFETs
Author :
Chen, Chih-Hung ; Deen, M. Jamal ; Matloubian, Mishel ; Cheng, Yuhua
Author_Institution :
Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada
Abstract :
An extraction method to obtain the channel thermal noise in MOSFETs directly from DC, scattering parameter and RF noise measurements is presented. In this extraction method, the transconductance (gm), output resistance (RDS), and source and drain resistances (RS and RD) are obtained from DC measurements. The gate resistance (RG) is extracted from scattering-parameter measurements, and the equivalent noise resistance (Rn) is obtained from RF noise measurements. This method has been verified by using the measured data of a 0.36 μm n-type MOSFET up to 18 GHz.
Keywords :
MOSFET; S-parameters; semiconductor device measurement; semiconductor device models; semiconductor device noise; thermal noise; 0.36 micron; 18 GHz; DC measurement; MOSFET; RF noise measurement; channel thermal noise; drain resistance; equivalent noise resistance; gate resistance; output resistance; parameter extraction; scattering parameter measurement; source resistance; transconductance; 1f noise; Circuit noise; Circuit simulation; Electrical resistance measurement; Integrated circuit noise; MOSFETs; Noise measurement; Radio frequency; Scattering; Semiconductor device modeling;
Conference_Titel :
Microelectronic Test Structures, 2000. ICMTS 2000. Proceedings of the 2000 International Conference on
Print_ISBN :
0-7803-6275-7
DOI :
10.1109/ICMTS.2000.844403
