DocumentCode :
2026001
Title :
Full Noise Characterization of Micromave Devices. Application to GaAlAs/GaAs TEGFET
Author :
Chusseau, L. ; Carnez, B. ; Brun, M. Le ; Rumelhard, C.
fYear :
1986
fDate :
8-12 Sept. 1986
Firstpage :
841
Lastpage :
846
Abstract :
A new method for the full noise characterization of microwave devices is proposed. It takes into account various kinds of measurement uncertainties, and is able to process results from an automatic noise measurement set up. The full noise characterization of a 140¿m gatewidth and 0.5¿m gate length TEGFET in the 2-18 GHz band is given as an exemple.
Keywords :
Admittance measurement; Equations; Gallium arsenide; HEMTs; MODFETs; Microwave devices; Microwave theory and techniques; Noise figure; Noise measurement; Tuners;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1986. 16th European
Conference_Location :
Dublin, Ireland
Type :
conf
DOI :
10.1109/EUMA.1986.334297
Filename :
4133780
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2026001
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