Characterization of trench isolation for BiCMOS technologies

Author

Klootwijk, J.H. ; Muda, C. ; Terpstra, D.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

2000

fDate

2000

Firstpage

200

Lastpage

204

Abstract

We have developed and characterized new test structures for deep trench isolation in deep submicron BiCMOS technologies. These structures enable accurate characterization of the influence of trench isolation on device performance, without the necessity of fully processed lots. In particular capacitances, breakdown and leakage mechanisms can be investigated. This paper discusses the test structures, measurement methods (in particular separation of capacitance contributions) as well as some technological conclusions that were derived from measurement results that were obtained with the test structures.

Keywords

BiCMOS integrated circuits; capacitance measurement; integrated circuit measurement; integrated circuit testing; isolation technology; leakage currents; breakdown mechanisms; capacitances; deep submicron BiCMOS technologies; deep trench isolation; leakage mechanisms; measurement methods; test structures; trench isolation characterisation; Bandwidth; BiCMOS integrated circuits; Boron; Etching; Isolation technology; Parasitic capacitance; Power dissipation; Production; Silicon; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2000. ICMTS 2000. Proceedings of the 2000 International Conference on

Print_ISBN

0-7803-6275-7

Type

conf

DOI

10.1109/ICMTS.2000.844431

Filename

844431