DocumentCode :
2026362
Title :
A 45 dB variable gain low noise MMIC amplifier
Author :
Masud, M. Anowar ; Zirath, Herbert ; Kelly, Matthew
Author_Institution :
Lab. of Microwave Electron., Chalmers Univ. of Technol., Goteborg, Sweden
fYear :
2005
fDate :
3-4 Oct. 2005
Firstpage :
669
Lastpage :
672
Abstract :
A variable gain amplifier operating at 2.5 GHz based on single ended topology has been designed and characterized. Three such stages were cascaded preceded by a single stage LNA. A source follower is used at the output as an active load matching. Overall dynamic gain variation is 45 dB with a maximum gain of 47 dB. The -3 dB bandwidth is 0.800 GHz. A minimum noise figure of 0.81 dB is obtained in the highest gain mode. Maximum value of 1 dB compression at the output is -7.2 dBm and the corresponding third order intercept point is +5.3 dBm. Consumed DC power 285 mW and is immune to gain variation. The circuit is implemented with GaAs pHEMT technology. The combined area occupied by the multistage low noise VGA and the single ended VGA is 3.5 mm /spl times/ 3 mm.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; UHF amplifiers; gallium arsenide; low noise amplifiers; 0.800 GHz; 2.5 GHz; 285 mW; 45 dB; LNA; active load matching; dynamic gain variation; pHEMT technology; single ended topology; variable gain low noise MMIC amplifier; CMOS technology; Circuits; Communication system control; Feeds; Frequency; Gain; HEMTs; Low-noise amplifiers; MMICs; Topology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
Type :
conf
Filename :
1637308
Link To Document :
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