Title :
Non-linear properties of PHEMT transistors exploited in the design of active rf/microwave frequency multipliers
Author :
Thomas, Donald G., Jr. ; Branner, G.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
Abstract :
A prerequisite for the realization of active frequency multipliers is the existence of a nonlinear device having sufficient efficiency for generation of the desired frequency multiple. This paper discusses and presents for the first time, in a quantitative manner, the nonlinearities of the PHEMT device which makes it a desirable candidate for frequency multiplier design
Keywords :
active networks; frequency multipliers; harmonic generation; high electron mobility transistors; microwave field effect transistors; microwave frequency convertors; PHEMT device nonlinearities; PHEMT transistors; active microwave frequency multipliers; frequency multiplier design; harmonic generation; nonlinear device; transconductance; Capacitance; Frequency conversion; HEMTs; MESFETs; Microwave devices; Microwave transistors; PHEMTs; Radio frequency; Transconductance; Voltage;
Conference_Titel :
Circuits and Systems, 1996., IEEE 39th Midwest symposium on
Conference_Location :
Ames, IA
Print_ISBN :
0-7803-3636-4
DOI :
10.1109/MWSCAS.1996.594116
