Title :
Controlled selective amplifier of microwave range
Author :
Krutchinskiy, S.G. ; Svizev, G.A. ; Prokopenko, Nikolay N. ; Butyrlagin, N.V.
Author_Institution :
Southern Fed. Univ., Taganrog, Russia
Abstract :
The architecture and the results of investigations of the properties of controlled selective amplifiers (SA) with low current consumption for microwave range based on SiGe technology are presented. Application of MOS transistors provides high weakening of the output signal in the low (near resonance) frequency range at the expense of minimizing the direct transmission of the input signal at the output SA.
Keywords :
Ge-Si alloys; MOSFET; microwave amplifiers; semiconductor materials; MOS transistors; SiGe; controlled SA; controlled selective amplifier; current consumption; direct transmission minimization; microwave range; silicon germaniun technology; Educational institutions; Electronic mail; Microwave amplifiers; Microwave transistors; Optimized production technology; Region 8; Silicon germanium;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
