DocumentCode :
2030150
Title :
X-band image-rejection mixer based on GaAs quasi-vertical schottky diodes
Author :
Lee, A.I. ; Kantyuk, D.V. ; Tolstolutsky, S.I.
Author_Institution :
Res. Inst. of Radiocommun., Rostov-on-Don, Russia
fYear :
2013
fDate :
8-14 Sept. 2013
Firstpage :
84
Lastpage :
85
Abstract :
Results of development the MMIC mixer have been presented. The mixer chip with dimensions 1.8×1.2 mm2 has been made. The IC provides conversion loss less than 8.0 dB and image-reject more than 20 dB within 8-12 GHz frequency range.
Keywords :
MMIC mixers; Schottky diode mixers; gallium arsenide; GaAs; GaAs quasi-vertical Schottky diodes; MMIC mixer; X-band image-rejection mixer; frequency 8 GHz to 12 GHz; mixer chip; Gallium arsenide; IEEE Transactions on Microwave Theory and Techniques; Microwave theory and techniques; Mixers; Region 8; Schottky diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
Type :
conf
Filename :
6652619
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2030150
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