DocumentCode
2033459
Title
Peculiarities of electron transport in pHEMT on donor-acceptor doping heterostructures
Author
Lukashin, V.M. ; Pashkovskiy, A.B. ; Zhuravlev, K.S. ; Toropov, A.I. ; Lapin, V.G. ; Golant, E.I. ; Kapralova, A.A.
Author_Institution
Fed. State Unitary Corp. R&PC Istok, Fryazino, Russia
fYear
2013
fDate
8-14 Sept. 2013
Firstpage
122
Lastpage
124
Abstract
The study results of physical mechanisms which provide abrupt increase of output power of pHEMT with donor-acceptor doping heterostructures are presented. It is shown, that complementary using of potential barriers provokes abrupt decrease of the role of transversal space transfer of electrons in the heterostructure, and increases the role of energy quantization in transistor channels.
Keywords
high electron mobility transistors; semiconductor doping; donor-acceptor doping heterostructures; electron transport; energy quantization; pHEMT; potential barriers; transistor channels; transversal space electron transfer; Doping; Electric potential; Electronic mail; Logic gates; PHEMTs; Region 8;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-395-1
Type
conf
Filename
6652739
Link To Document