Title :
Investigation of characteristics and modeling of Ka-band 0.15 µm GaN HEMT on SiC substrate
Author :
Dobush, I.M. ; Kokolov, A.A. ; Torkhov, A.A. ; Babak, L.I.
Author_Institution :
Tomsk State Univ. of Control Syst. & Radioelectron., Tomsk, Russia
Abstract :
A brief description of the design and manufacturing technology of 0.15 um GaN HEMT on SiC with T-shaped gate for the Ka-band is presented. The probe measurements of GaN HEMT with Wg = 4×100 μm are presented. Based on these measurements the nonlinear model EEHEMT was constructed.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device manufacture; semiconductor device measurement; silicon compounds; wide band gap semiconductors; GaN; Ka-band HEMT; SiC; T-shaped gate; design technology; manufacturing technology; nonlinear model EEHEMT; probe measurements; size 0.15 mum; Electronic mail; Gallium nitride; HEMTs; Microwave technology; Semiconductor device measurement; Silicon carbide;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
