• DocumentCode
    2034232
  • Title

    The study of forward and reverse schottky junction for dual magnetodiode

  • Author

    Phetchakul, T. ; Luanatikomku, W. ; Yamwong, W. ; Poyai, A.

  • Author_Institution
    Dept. of Electron., King Mongkut´´s Inst. of Technol. Ladkrabang, Bangkok, Thailand
  • fYear
    2012
  • fDate
    5-8 March 2012
  • Firstpage
    599
  • Lastpage
    602
  • Abstract
    This paper presents schottky diode for sensing magnetic field. The structure is the same as dual magnetodiode that had been reported by the same group. The device can operate both in forward and reverse biasing for magnetic field device. The sensitivity (ΔVo/ΔB) by simulation of forward bias is 0.8 mV/T at the current 1.93 μA and reverse bias is 6 nV/T at the current 13.49 pA . Two modes of operation show linearity which electron is the only type of carrier. The mechanism of forward and reverse modes of operation are described.
  • Keywords
    Schottky diodes; magnetic field measurement; magnetic sensors; Schottky diode; Schottky junction; dual magnetodiode; magnetic field device; magnetic field sensing; Nanoelectromechanical systems; Optical sensors; Magnetodiode; Schottky junction; Sentaurus TCAD;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems (NEMS), 2012 7th IEEE International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4673-1122-9
  • Type

    conf

  • DOI
    10.1109/NEMS.2012.6196847
  • Filename
    6196847
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2034232