Glass microwave IC packaging technology

Author

Perko, Richard

Author_Institution

M/A-COM Inc., Burlington, MA, USA

fYear

1994

fDate

10-12 May 1994

Firstpage

857

Lastpage

862

Abstract

A high performance integration technology for microwave circuits based on a novel glass-silicon wafer is described. Active circuits can be created by using the silicon base substrate for diodes or a completely passive approach can be used as an integration medium for multi-chip assemblies. The substrate performance characteristics and processing are covered along with examples of circuits for both military and commercial applications. The technology is shown to be a cost effective means of integrating discrete semiconductors or ICs into higher level functions

Keywords

borosilicate glasses; hybrid integrated circuits; integrated circuit packaging; microwave integrated circuits; multichip modules; silicon; substrates; thin film circuits; B2O3-SiO2; B2O3-SiO2-Si; BSG; BSG-Si; Si; glass microwave IC packaging technology; glass-Si wafer; high performance integration technology; multichip assemblies; substrate performance characteristics; substrate processing; Active circuits; Assembly; Cost function; Glass; Integrated circuit packaging; Microwave circuits; Microwave technology; Semiconductor diodes; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electro/94 International. Conference Proceedings. Combined Volumes.

Conference_Location

Boston, MA

Print_ISBN

0-7803-2630-X

Type

conf

DOI

10.1109/ELECTR.1994.472637

Filename

472637