Au bumped known good die

Au bumping of chips is practised both as a plating process at the wafer level and as a mechanical (single point bumping) process at the die level. Currently Au bumping is done to support ILB (Inner Lead Bond) for TAB devices and more recently for a wide variety of flip chip interconnect methods. Both of these Au bumping processes result in chips that requires an additional interconnect process to provide for test and burn-in. This requires additional handling and test sockets for the bare die. Sockets for bare die burn-in are not trivial in complexity or use. This paper describes a process for the production of Au bumped KGD (Known Good Die). This Au bump KGD process has an equivalent bump structure to the mechanical bumping process. It has the added benefit of being able to fully test and burn-in the device through the wire bond used to make the Au bump. The Au bumped KGD process is extendible to future devices to the same degree that wire bonders are advanced to meet these requirements. The process is also scaleable from low volume quantities through high volumes using primarily a standard wire bonding tool set. It is cost competitive with other bumping processes in addition to providing the test and burn-in interconnect