Plasma etching process of AIN/Mo and Moly for CMOS compatible MEMS devices

Author

Wei Deng ; de xian, J.S.B.W.T.

Author_Institution

Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore

fYear

2012

fDate

5-7 Dec. 2012

Firstpage

744

Lastpage

745

Abstract

This work reports the methodology of aluminum nitride (AIN/Mo) and Molybdenum (Mo) etching specifically m microelectromechamcal systems (MEMS) fabrication. AIN/Mo etching is investigated in electron cyclotron resonance (ECR) reactive ion etching. It is found that the amsotropy of wet etching of AIN/Mo is notably affected by the crystal orientation (002) of the material. AIN/Mo etching is a critical step in AIN/Mo platform and essential to applications such as radio frequency (RF) MEMS and mertial MEMS.

Keywords

CMOS integrated circuits; aluminium compounds; microfabrication; micromechanical devices; molybdenum; sputter etching; AlN-Mo; CMOS compatible MEMS devices; ECR reactive ion etching; MEMS fabrication; aluminum nitride methodology; electron cyclotron resonance reactive ion etching; material crystal orientation; microelectromechanical system fabrication; molybdenum etching methodology; plasma etching process; wet etching anisotropy; Conferences; Decision support systems; Electronics packaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference (EPTC), 2012 IEEE 14th

Conference_Location

Singapore

Print_ISBN

978-1-4673-4553-8

Electronic_ISBN

978-1-4673-4551-4

Type

conf

DOI

10.1109/EPTC.2012.6507182

Filename

6507182