Title :
Comparison of the electrical properties for etched and as-deposited BLT thin films
Author :
Kyu-Tae Lim ; Kyoung-Tae Kim ; Dong-Pyo Kim ; Chang-Il Kim
Author_Institution :
Sch. of Electr. & Electron. Eng., Chungang Univ., Seoul, South Korea
Abstract :
Summary form only given, as follows. In recent years, some Bi-layered perovskite oxide such as SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) and Bi/sub 4-x/La/sub x/Ti/sub 3/O/sub 12/ (BLT) have been intensively studied for use in FRAMs because of its low leakage current, low coercive field, and fatigue-free with simple Pt electrode. The fatigue-free behavior of SBT and BLT thin film was due to the charge compensating effect of Bi/sub 2/O/sub 2/ layers resulting in the reduction of space charge and from domain wall unpinning that happens at least as rapidly as domain pinning.
Keywords :
bismuth compounds; charge compensation; electric domain walls; ferroelectric storage; ferroelectric thin films; lanthanum compounds; leakage currents; random-access storage; space charge; sputter etching; strontium compounds; Bi-layered perovskite oxide; Bi/sub 4-x/La/sub x/Ti/sub 3/O/sub 12/; FRAM; SrBi/sub 2/Ta/sub 2/O/sub 9/; charge compensating effect; coercive field; domain wall unpinning; electrical properties; etched thin films; fatigue-free behavior; leakage current; space charge; Argon; Dry etching; Electrons; Plasma applications; Plasma density; Plasma sources; Plasma temperature; Sputter etching; Sputtering; Transistors;
Conference_Titel :
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location :
Jeju, South Korea
Print_ISBN :
0-7803-7911-X
DOI :
10.1109/PLASMA.2003.1229948
