DocumentCode :
2038577
Title :
Effect of third harmonic peaking in gate drive of class E amplifier
Author :
Yano, Shoko ; Shutou, Kouta ; Suetsugu, Tadashi
Author_Institution :
Dept. of Electron. Eng. & Comput. Sci., Fukuoka Univ., Fukuoka, Japan
fYear :
2010
fDate :
21-24 Nov. 2010
Firstpage :
1792
Lastpage :
1795
Abstract :
In this paper, in order to reduce power dissipation at MOSFET gate port of class E amplifier, we propose gate signal peaking using third harmonic component. With PSPICE simulation, it is shown that higher power efficiency and higher output power of power stage can be obtained using third harmonic component than pure sinusoidal gate signal with same level of gate power dissipation.
Keywords :
MOSFET; SPICE; power amplifiers; MOSFET gate port; PSPICE simulation; class E amplifier; gate drive; gate signal peaking; power dissipation reduction; sinusoidal gate signal; third harmonic peaking;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
TENCON 2010 - 2010 IEEE Region 10 Conference
Conference_Location :
Fukuoka
ISSN :
pending
Print_ISBN :
978-1-4244-6889-8
Type :
conf
DOI :
10.1109/TENCON.2010.5686060
Filename :
5686060
Link To Document :
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