Large-Signal Model for AIGaN/GaN HEMT for Designing High Power Amplifiers of Next Generation Wireless Communication Systems

In this paper, an accurate table-based large-signal model for AIGaN/GaN HEMT accounting for trapping and self-heating induced current dispersion is presented. This model will be used for designing of high power amplifiers for next generation communication systems. The B-spline approximation technique is used for the model element derivation, which improves the intermodulation distortion simulation. The model implementation takes in to account the dynamic behavior of the trapping and self-heating processes. The model validity is verified through simulated and measured outputs of the device under pulsed and continuous large-signal excitations for 1-mm gate width devices. Single and two-tone simulation results show that the model can efficiently predict the output power and its harmonics and the associated intermodulation distortion under different input power and bias conditions.