Impact of ULK restoration techniques on propagation performance for interconnects of the 45 nm technology node and below

Author

Gallitre, M. ; Blampey, B. ; Chaabouni, H. ; Farcy, A. ; Grosgeorges, P. ; Lacrevaz, T. ; Bermond, C. ; Flechet, B. ; Ancey, P.

Author_Institution

Univ. de Savoie, Le Bourget du Lac

fYear

2008

fDate

12-15 May 2008

Firstpage

1

Lastpage

4

Abstract

The development of advanced ICs architectures for the 45 nm technology node and beyond faces several integration and performance issues. Porous dielectrics are very prone to degradation during process flow, potentially compromising signal integrity. Specific processes such as annealing, restoration treatments, and pore-sealing by liner deposition are considered as potential solutions. Their utility and impact on propagation performance is investigated through both RF measurements and electromagnetic simulations.

Keywords

annealing; dielectric materials; electromagnetic wave propagation; integrated circuit interconnections; IC architectures; RF measurements; ULK restoration techniques; annealing; electromagnetic simulations; interconnects propagation performance; liner deposition; pore-sealing; porous dielectrics; restoration treatments; Annealing; Copper; Degradation; Dielectric losses; Dielectric materials; Dielectrics and electrical insulation; Driver circuits; Integrated circuit interconnections; Moisture; Performance analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Signal Propagation on Interconnects, 2008. SPI 2008. 12th IEEE Workshop on

Conference_Location

Avignon

Print_ISBN

978-1-4244-2317-0

Electronic_ISBN

978-1-4244-2318-7

Type

conf

DOI

10.1109/SPI.2008.4558409

Filename

4558409