Title :
Ion-implanted InP for ultrafast photodetector applications
Author :
Carmody, C. ; Boudinov, Henri ; Tan, H.H. ; Jagadish, C. ; Dao, L.V. ; Gal, M.
Author_Institution :
Dept. of Electronic Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
In order to create highly resistive InP with short carrier lifetimes, p-type epilayers at 200°C were implanted with MeV P+ ions up to doses of 1 × 1016 cm-2. Samples were subsequently annealed at temperatures between 400°C and 700°C for 30s. Double crystal x-ray diffraction, time resolved photoluminescence and Hall effect measurements were performed on these samples. The results of these experiments were then compared with the ones obtained from implantation into semi-insulating InP with a view to create materials suitable for ultrafast photodetector fabrication.
Keywords :
Hall effect; III-V semiconductors; X-ray diffraction; annealing; carrier lifetime; indium compounds; ion implantation; photodetectors; photoluminescence; semiconductor epitaxial layers; time resolved spectra; 200 degC; 400 to 700 degC; Hall effect; InP; annealing; carrier lifetime; double crystal X-ray diffraction; ion implantation; p-type epilayer; semi-insulating InP; time resolved photoluminescence; ultrafast photodetector; Annealing; Charge carrier lifetime; Hall effect; Indium phosphide; Performance evaluation; Photodetectors; Photoluminescence; Temperature; Time measurement; X-ray diffraction;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1022914
