Title :
40nm CMOS DC-DC PWM boost converter for high power audio in mobile application
Author :
Neri, Ferrante ; Di Fazio, F. ; Lonka, S. ; Somayaiula, S. ; Cimaz, Lionel ; Cahu, S. ; Pantaleon, R.
Author_Institution :
Samsung Electron., Suwon, South Korea
Abstract :
On-chip boost DC-DC converter used for high power audio ICs for mobile application is presented in this paper. For special systematic requirement, a combination of fixed-frequency pulse-width modulation (PWM) and hysteretic PWM control scheme is used. This converter is designed with a 40nm CMOS process and experimental results show that, the converter can operate with supply voltage from 2.7 to 4.2 V, which is suitable for single-cell lithium-ion rechargeable battery supply application, and boost voltage up to 4.9 V for delivering 1 Wrms audio power output. The output ripple voltage is about 45 mV with 20 μF off-chip capacitors and 2.2 μH off-chip inductor. The power efficiency is over 82% for lWrms audio application while over 75% for load currents up to 900mA, and maximum to 88% for 200mA load current.
Keywords :
CMOS integrated circuits; DC-DC power convertors; PWM power convertors; capacitors; inductors; integrated circuit design; mobile radio; CMOS DC-DC PWM boost converter; CMOS process; audio application; audio power output; boost voltage; converter design; fixed-frequency pulse-width modulation; high power audio IC; hysteretic PWM control scheme; load current; mobile application; off-chip capacitor; off-chip inductor; on-chip boost DC-DC converter; output ripple voltage; power efficiency; single-cell lithium-ion rechargeable battery supply application; size 40 nm; supply voltage; voltage 2.7 V to 4.2 V;
Conference_Titel :
Electronics Design, Systems and Applications (ICEDSA), 2012 IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2162-4
DOI :
10.1109/ICEDSA.2012.6507823