Title :
The role of interstitial manganese in manganese-doped ferromagnetic semiconductors
Author :
Erwin, Steven C. ; Petukhov, A.G.
Author_Institution :
Center for Comput. Mater. Sci., Naval Res. Lab., Washington, DC, USA
fDate :
March 30 2003-April 3 2003
Abstract :
We present a theory of interstitial Mn in Mn-doped ferromagnetic semiconductors. Using density-functional theory, we show that under the non-equilibrium conditions of growth, interstitial Mn is easily formed near the surface by a simple low-energy adsorption pathway. In GaAs, isolated interstitial Mn is an electron donor, each compensating two substitutional Mn acceptors. Within an impurity-band model, partial compensation promotes ferromagnetic order below the metal-insulator transition, with the high Curie temperature occurring for 0.5 holes per substitutional Mn.
Keywords :
Curie temperature; III-V semiconductors; adsorption; density functional theory; ferromagnetic materials; gallium arsenide; impurity distribution; interstitials; magnetic semiconductors; manganese; metal-insulator transition; semimagnetic semiconductors; Curie temperature; GaAs:Mn; Mn acceptors; density functional theory; electron donor; impurity band model; interstitial manganese; low energy adsorption; manganese doped ferromagnetic semiconductors; metal-insulator transition; nonequilibrium conditions; Bonding; Bridges; Kinetic energy; Manganese;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230274
