Title :
Determination of amorphous silicon absorption spectrum
Author_Institution :
Kharkiv Nat. Univ. of Radio Electron., Kharkov, Ukraine
Abstract :
An empirical model of the spectral dependence of amorphous silicon absorption coefficient is presented. The effect of the amorphous structure degree of disorder on the absorption coefficient value is demonstrated. The results can be applied for modeling of devices based on a-Si:H.
Keywords :
absorption coefficients; amorphous semiconductors; elemental semiconductors; hydrogenation; silicon; Si:H; absorption coefficient value; amorphous silicon absorption spectrum determination; amorphous structure effect; spectral dependence empirical model; Absorption; Abstracts; Amorphous silicon; Educational institutions; Electronic mail; Photovoltaic cells;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
