DocumentCode
2041998
Title
Measurement of p-n junction-to-case thermal resistance in impatt diodes
Author
Kudryk, Ya.Ya. ; Slipokurov, V.S. ; Koltsov, G.S.
Author_Institution
Inst. of Semicond. Phys. named after V.E. Lashkaryov of NAS Ukraine, Kiev, Ukraine
fYear
2013
fDate
8-14 Sept. 2013
Firstpage
762
Lastpage
763
Abstract
We present a method for measurement of p-n junction temperature as well as static and pulse thermal resistance in IMPATT diodes. The method is tested using 8 mm-wave IMPATT diodes with an integrated heat sink made at the State Enterprise Research Institute “Orion” (Kyiv).
Keywords
IMPATT diodes; heat sinks; p-n junctions; temperature measurement; thermal resistance; IMPATT diode; State Enterprise Research Institute Orion; integrated heat sink; p-n junction temperature measurement; pulse thermal resistance; static thermal resistance; Electrical resistance measurement; Gold; P-n junctions; Semiconductor device measurement; Semiconductor diodes; Silicon; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-395-1
Type
conf
Filename
6653050
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