InP/InGaAs heterojunction bipolar transistors with superlattice emitter structure

Author

Wang, Wei-Chou ; Lin, Kuan-Po ; Yu, Kuo-Hui ; Lin, Kun-Wei ; Yen, Chih-Hung ; Chiou, Wen-Huei ; Wang, Chih-kai ; Liu, Wen-Chau

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

2000

fDate

2000

Firstpage

234

Lastpage

237

Abstract

A heterojunction bipolar transistor with superlattice emitter structure based on InP/InGaAs material system has been demonstrated. Two devices with different period of superlattice and emitter thickness were proposed. By introducing the superlattice into the emitter, the confinement of holes is enhanced. Experimentally, for higher periods of superlattice, the current gain is enhanced and more stable temperature-dependent characteristics are observed. The common-emitter current gains up to 170 and 54 are obtained for the studied devices with emitter thickness of 800Å and 150Å, respectively.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor superlattices; InP-InGaAs; InP/InGaAs heterojunction bipolar transistor; current gain; hole confinement; superlattice emitter structure; temperature dependence; Bipolar transistors; Effective mass; Electrons; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Resonant tunneling devices; Substrates; Superlattices; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Print_ISBN

0-7803-6698-0

Type

conf

DOI

10.1109/COMMAD.2000.1022935

Filename

1022935