Title :
Micromagnetic modeling of pseudo spin valve elements
Author_Institution :
Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., China
fDate :
March 30 2003-April 3 2003
Abstract :
In this paper, we discuss a magnetoresistance random access memory (MRAM) made of pseudo spin valve (PSV) devices. The dependence of these fields on the shape of PSV and the residual domain are studied. Micromagnetic modelling is used to investigate the effect of magnetostatic coupling and its properties are analyzed.
Keywords :
Permalloy; ferromagnetic materials; finite difference methods; magnetic domains; magnetic hysteresis; magnetic thin film devices; magnetic thin films; micromagnetics; spin valves; FeNi; magnetoresistance random access memory; magnetostatic coupling; micromagnetic modeling; pseudo spin valve devices; residual domain; Couplings; Magnetic analysis; Magnetic domains; Magnetic properties; Magnetoresistance; Magnetostatics; Micromagnetics; Random access memory; Shape; Spin valves;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230312
