Title :
Single Silicon Field Emitter with High Aspect Ratio
Author :
Gudkova, S.A. ; Makhiboroda, M.A. ; Fedirko, V.A. ; Djuzhev, N.A.
Author_Institution :
F.V. Lukin State Res. Inst. of Phys. Problems, Moscow
Abstract :
Single silicon field emitter with high aspect ratio is fabricated using deep wet anisotropic etching and step-by-step oxidation. The emission performance of the field emitter is characterised. The C-V characteristic of the emitter together with the Fauler-Nordheim plot are presented
Keywords :
capacitance; elemental semiconductors; etching; field emission; oxidation; silicon; C-V characteristic; Fauler-Nordheim plot; Si; aspect ratio; deep wet anisotropic etching; single silicon field emitter; step-by-step oxidation; Anodes; Capacitance-voltage characteristics; Cathodes; Current measurement; Diodes; Fabrication; Geometry; Scanning electron microscopy; Silicon; Slabs;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
DOI :
10.1109/IVNC.2006.335449
