DocumentCode :
2042758
Title :
Template method of forming InSb large aspect ratio quantum nanowires
Author :
Gorokh, G.G. ; Obukhov, I.A. ; Lozovenko, A.A. ; Zakhlebaeva, A.I. ; Sochneva, E.A.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear :
2013
fDate :
8-14 Sept. 2013
Firstpage :
820
Lastpage :
821
Abstract :
Method of nanoporous templates creating based on the anodic alumina (AA) for forming of quantum nanowires with a high aspect ratio is developed. The processes of InSb electrochemical deposition in the pores of templates are studied. The results of electron microscopic study of these nanostructures and electron probe electron probe X-ray spectrum microanalysis are shown. Percentage ratio of indium and antimony in formed nanowires is determined.
Keywords :
III-V semiconductors; X-ray spectra; electron microscopy; electron probe analysis; indium compounds; nanoporous materials; nanowires; narrow band gap semiconductors; semiconductor quantum wires; InSb; anodic alumina; electrochemical deposition; electron microscopic study; electron probe electron probe X-ray spectrum microanalysis; indium-antimony percentage ratio; large-aspect ratio quantum nanowires; nanoporous templates; nanostructures; template method; template pores; Copper; Educational institutions; Electronic mail; Indium; Informatics; Nanowires; Probes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
Type :
conf
Filename :
6653079
Link To Document :
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