DocumentCode :
2042883
Title :
Thin films of Zr1-xSnxTiO4 for application in microelectronics
Author :
Gusmano, G. ; Bianco, A. ; Viticoli, M. ; Kaciulis, S. ; Mattogno, G. ; Pandolfi, L.
Author_Institution :
Dept. of Chem. Sci. & Technol., Tor Vergata Univ., Rome, Italy
fYear :
2000
fDate :
2000
Firstpage :
379
Lastpage :
382
Abstract :
Thin films of Zr1-xSnxTiO4 (ZTS) were prepared by the polymeric precursor route. The influence of process parameters and dopants (Nb, Sb and Ta) on the chemical composition of the films was investigated by means of the XPS technique. Surface segregation of SnIV and the presence of Sn0, TiII, and TiIII species in the films were revealed from XPS depth profiles.
Keywords :
X-ray photoelectron spectra; antimony; ceramics; doping profiles; liquid phase deposited coatings; liquid phase deposition; microwave materials; niobium; surface composition; surface segregation; tantalum; tin compounds; zirconium compounds; XPS depth profiles; ZTS thin film; ZrSnTiO4:Nb; ZrSnTiO4:Sb; ZrSnTiO4:Ta; dopant effect; film chemical composition; microelectronics; polymeric precursor route synthesis; process parameters; surface segregation; Chemical elements; Electrostatics; Gold; Lenses; Microelectronics; Sputtering; Surface contamination; Tin; Transistors; Zirconium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
Type :
conf
DOI :
10.1109/COMMAD.2000.1022969
Filename :
1022969
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2042883
بازگشت