DocumentCode
2043158
Title
Rapid thermal annealing of NTD Si
Author
Mo, Li ; Karmar, T. ; Alexiev, D. ; Butcher, K.S.A.
Author_Institution
Australian Nucl. Sci. & Technol. Organ., Menai, NSW, Australia
fYear
2000
fDate
2000
Firstpage
411
Lastpage
414
Abstract
Neutron transmutation doped silicon (NTD Si) wafers were annealed in a commercial rapid thermal processor (AET RX Series). As a comparison, the wafers were also annealed in a conventional electric furnace. Successful rapid thermal annealing was demonstrated by the facts that no deep level impurities were detected by deep level transient spectrometry (DLTS), and the wafers annealed with two methods had identical final resistivities.
Keywords
electrical resistivity; elemental semiconductors; neutron effects; rapid thermal annealing; semiconductor doping; silicon; DLTS; Si; furnace annealing; neutron transmutation doped wafers; rapid thermal annealing; resistivity; Australia; Conductivity; Furnaces; Impurities; Lattices; Neutrons; Rapid thermal annealing; Rapid thermal processing; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN
0-7803-6698-0
Type
conf
DOI
10.1109/COMMAD.2000.1022977
Filename
1022977
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