Title :
Spin injection from a ferromagnetic metal into a semiconductor without a tunneling barrier
Author :
Ohno, H. ; Yoh, K. ; Sueoka, K. ; Mukasa, K.
Author_Institution :
Graduate Sch. of Eng., Hokkaido Univ., Sapporo, Japan
fDate :
March 30 2003-April 3 2003
Abstract :
In this paper, we demonstrate that spin injection in an Fe/p-InAs heterostructure without a tunnelling barrier. The external magnetic impedance of circularly polarization of the luminescence from the Fe/p-InAs heterostructure at 6.5, 50 and 70 k are shown.
Keywords :
III-V semiconductors; electroluminescence; ferromagnetic materials; indium compounds; iron; magnetic thin films; magnetic tunnelling; semiconductor-metal boundaries; spin polarised transport; 50 K; 6.4 K; 70 K; Fe-InAs; Fe/p-InAs heterostructure; circularly polarization; ferromagnetic metal; luminescence; magnetic impedance; spin injection; tunneling barrier; Electrons; Iron; Magnetic fields; Magnetic semiconductors; Optical surface waves; Polarization; Spin polarized transport; Sputtering; Temperature; Tunneling;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230335
