DocumentCode :
2043468
Title :
Low-k dielectrics for ULSI multilevel interconnections: thickness-dependent electrical and dielectric properties
Author :
Kim, H.K. ; Shi, F.G. ; Zhao, B. ; Brongo, M.
Author_Institution :
Dept. of Chem. & Biochem. Eng. & Mater. Sci., California Univ., Irvine, CA, USA
fYear :
2000
fDate :
2000
Firstpage :
62
Lastpage :
65
Abstract :
Electrical and dielectric properties of a promising low-dielectric constant (low-k) crystalline polymer thin film are investigated for deep-submicron multilevel interconnection applications. Filmetrics F20, I-V characteristic measurement, fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) are used to characterize the low-k film. The dc dielectric breakdown strength and the dielectric constant are obtained as a function of film thickness, and a model for the film thickness dependent breakdown strength is also discussed
Keywords :
Fourier transform spectra; ULSI; X-ray diffraction; electric breakdown; infrared spectra; integrated circuit interconnections; organic insulating materials; permittivity; polymer films; FTIR spectra; I-V characteristics; ULSI multilevel interconnections; X-ray diffraction; crystalline polymer thin film; dielectric breakdown strength; dielectric constant; film thickness; low-k dielectrics; Crystallization; Dielectric breakdown; Dielectric measurements; Dielectric thin films; Fourier transforms; Infrared spectra; Polymer films; Ultra large scale integration; X-ray diffraction; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulation, 2000. Conference Record of the 2000 IEEE International Symposium on
Conference_Location :
Anaheim, CA
ISSN :
1089-084X
Print_ISBN :
0-7803-5931-3
Type :
conf
DOI :
10.1109/ELINSL.2000.845437
Filename :
845437
Link To Document :
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