Title :
Optimisation of Arsenic Concentration Inn Amorphous Selenium Based Photo-detector Driven By Nitrogen (n)-doped CVD Diamond
Author :
Saito, I. ; Masuzawa, T. ; Yamaguchi, H. ; Okamura, H. ; Yamada, T. ; Butler, T. ; Rupesinghe, N.L. ; Amaratunga, G.A.J. ; Okano, K.
Author_Institution :
Dept. of Eng., Cambridge Univ.
Abstract :
In this paper, a) a-Se, b) lightly As doped a-Se and c) heavily As doped a-Se films were fabricated by multi-layered vacuum evaporation method as introduced in previous report. To explain briefly, Se and As 2Se3 were charged into the boat as the evaporation source and the sample holder rotates on top of both sources to create a multi-layered film. A slit was introduced on top of the As2Se 3 to limit the concentration of As within the film. X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) were carried out for each of these samples in order to identify the As concentration within the film. The photoconductivity of the film was measured and each of the films were illuminated with halogen light at different intensities
Keywords :
amorphous semiconductors; arsenic; diamond; elemental semiconductors; multilayers; nitrogen; photoconductivity; photodetectors; selenium; semiconductor thin films; CVD diamond; Se:As-C:N; X-ray photoelectron spectroscopy; multilayered film; multilayered vacuum evaporation; photoconductivity; photodetector; secondary ion mass spectroscopy; Amorphous materials; Annealing; CMOS image sensors; Cathodes; Crystallization; Degradation; Glass industry; Mass spectroscopy; Nitrogen; Photoconductivity;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
DOI :
10.1109/IVNC.2006.335231