DocumentCode
2048522
Title
A 2.25kV, 6.1mΩ-cm2 4H-SiC normally-off VJFET
Author
Khan, Ajmal ; Imran, Ali ; Hasan, Mohammed
Author_Institution
Dept. of Electron. Eng., Aligarh Muslim Univ., Aligarh, India
fYear
2012
fDate
17-19 Dec. 2012
Firstpage
1
Lastpage
4
Abstract
VJFET is the device commercially available and further research is going on. In this paper a SiC based power VJFET with low specific on resistance and high breakdown voltage is demonstrated. A low specific on resistance of 6.1mΩ-cm2 is achieved for a blocking voltage of 2250V by varying its device parameters like channel opening, drift region doping, drift length and the source-drain doping. VJFET demonstrated here do have high baliga´s figure of merit calculated as Vbl2/Ron-sp = 827 MW/cm2. These simulations are performed on Synopsys TCAD tool.
Keywords
electric resistance; junction gate field effect transistors; power field effect transistors; semiconductor device breakdown; semiconductor doping; silicon compounds; H-SiC; Synopsys TCAD tool; baliga figure of merit; blocking voltage; breakdown voltage; channel opening; device parameter; drift length; drift region doping; normally-off VJFET; power VJFET; resistance; source-drain doping; voltage 2.25 kV; Breakdown voltage; Channel; Mobility; Normally-off; SiC; VJFET;
fLanguage
English
Publisher
ieee
Conference_Titel
Power, Control and Embedded Systems (ICPCES), 2012 2nd International Conference on
Conference_Location
Allahabad
Print_ISBN
978-1-4673-1047-5
Type
conf
DOI
10.1109/ICPCES.2012.6508119
Filename
6508119
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