DocumentCode :
2049646
Title :
First or second generation SI cells? A comparison of sensitivity from an SI filter system viewpoint
Author :
Lu Yue ; Sewell, J.I.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear :
1990
fDate :
25-25 May 1990
Firstpage :
42675
Lastpage :
42679
Abstract :
A comparison study on SI filter sensitivity performance based on first generation and second generation cell realisation is carried out. The good sensitivity performance of second generation SI cell based structures is demonstrated by four filters and one equaliser. For SI filters based on first generation memory cells, it is shown that high ratio of clock frequency to cutoff frequency in lowpass case or high ratio of clock frequency to midband frequency in bandpass case would introduce high sensitivity performance, while the sensitivities of SI filters based on the second generation memory cell are not affected by the ratio.<>
Keywords :
active filters; equalisers; sensitivity analysis; switched current circuits; SI filter system; SI filters; clock frequency; cutoff frequency; equaliser; filter sensitivity; first generation cell realisation; first generation memory cells; midband frequency; second generation cell realisation; sensitivity; Active filters; Equalizers; Sensitivity; Switched circuits;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Digital and Analogue Filters and Filtering Systems, IEE Colloquium on
Conference_Location :
London, UK
Type :
conf
Filename :
472876
Link To Document :
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