Effect of Mg Doping in GaN Interlayer on the Performance of Green Light-Emitting Diodes

Author

Jun Zhang ; Xiang-Jing Zhuo ; Dan-Wei Li ; Lei Yu ; Kai Li ; Yuan-wen Zhang ; Jia-Sheng Diao ; Xing-Fu Wang ; Shu-Ti Li

Author_Institution

Lab. of Nano-photonic Functional Mater. & Devices, South China Normal Univ., Guangzhou, China

Volume

27

Issue

2

fYear

2015

fDate

Jan.15, 15 2015

Firstpage

117

Lastpage

120

Abstract

A light-emitting diode (LED) structure containing a low-temperature (LT) GaN interlayer between active region and AlGaN electron blocking layer is proposed to improve the performance of InGaN-based green LEDs. The experimental and simulated results show that, as the Mg doping depth in the LT-GaN interlayer increases, the hole injection efficiency gets improved and electron current leakage decreases, while defect-related nonradiative recombination increases. With an optimized Mg doping depth in the LT-GaN interlayer, a substantial suppression of efficiency droop can be achieved compared with the conventional LED.

Keywords

III-V semiconductors; aluminium compounds; doping; gallium compounds; indium compounds; light emitting diodes; magnesium; optical materials; optical multilayers; AlGaN; AlGaN electron blocking layer; GaN:Mg; InGaN; InGaN-based green LED; LT-GaN interlayer; active region; conventional LED; defect-related nonradiative recombination; efficiency droop; electron current leakage; green light-emitting diodes; hole injection efficiency; light-emitting diode structure; low-temperature GaN interlayer; optimized Mg doping depth; substantial suppression; Aluminum gallium nitride; Charge carrier processes; Doping; Gallium nitride; Light emitting diodes; Quantum well devices; Temperature measurement; Mg doping; holes injection; low temperature interlayer;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2014.2362939

Filename

6928431