Title :
Proposal for a new room temperature X-ray detector-thallium lead-iodide
Author_Institution :
Eur. Synchrotron Radiat. Facility, Grenoble, France
Abstract :
Numerous compounds have been considered for room temperature semiconductor detector application, but most of them suffer from difficulties of crystal growth, fabrication and handling. Here we propose TlPbI3, as a promising candidate, which does not have any structural phase transitions between room temperature and melting point and it is non-layered, with rhombohedral crystal structure. The low vapour pressure makes the crystal growth easier and it has a low melting point (619 K), high Z, high density (6.6 g/cm3), and bandgap of 2.3 eV. X-ray photoconductivity measurements indicate that this material can be used as a room temperature solid state detector
Keywords :
X-ray detection; semiconductor counters; thallium compounds; 2.3 eV; TlPbI3; X-ray photoconductivity measurements; low vapour pressure; rhombohedral crystal structure; room temperature X-ray detector; structural phase transitions; Crystalline materials; Fabrication; Photoconducting materials; Photoconductivity; Photonic band gap; Proposals; Solid state circuits; Temperature; X-ray detection; X-ray detectors;
Conference_Titel :
Nuclear Science Symposium, 1999. Conference Record. 1999 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-5696-9
DOI :
10.1109/NSSMIC.1999.845774
