Critical optical power density in PIN-photodiodes

Author

Meister, M. ; Reinhard, M. ; Liebold, U. ; Kirsten, D. ; Nuernbergk, D.M.

Author_Institution

Inst. for Microelectron. & Mechatron. Syst. GmbH, Ilmenau, Germany

fYear

2012

fDate

20-23 March 2012

Firstpage

1

Lastpage

5

Abstract

PIN photodiodes are often used in optical integrated circuits. Although they can feature a very good RF-performance, this can be effected by the optical power density of the incident light. The influence of this effect on the RF-performance of PIN photodiodes is described. When a critical optical power density in the epi-layer is exceeded the 3dB frequencies are cut off. An analytical equation is derived to describe the effect. The results are compared to RF measurements and verified by numerical simulation.

Keywords

integrated optics; p-i-n diodes; photodiodes; PIN photodiodes; RF measurements; RF-performance; analytical equation; critical optical power density; epi-layer; optical integrated circuits; Equations; Integrated optics; Mathematical model; Measurement by laser beam; Optical saturation; Optical sensors; Photodiodes; PIN; Photodiode; RF behavior; critical optical power; high current space charge effect; laser spot;

fLanguage

English

Publisher

ieee

Conference_Titel

Systems, Signals and Devices (SSD), 2012 9th International Multi-Conference on

Conference_Location

Chemnitz

Print_ISBN

978-1-4673-1590-6

Electronic_ISBN

978-1-4673-1589-0

Type

conf

DOI

10.1109/SSD.2012.6197902

Filename

6197902